Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform

NAMGI HONG, RAFAEL JUMAR CHU, SOO SEOK KANG, GEUNHWAN RYU, JAE HOON HAN, KI JUN YU, DAEHWAN JUNG, WON JUN CHOI

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We demonstrate flexible GaAs photodetector arrays that were hetero-epitaxially grown on a Si wafer for a new cost-effective and reliable wearable optoelectronics platform. A high crystalline quality GaAs layer was transferred onto a flexible foreign substrate and excellent retention of device performance was demonstrated by measuring the optical responsivities and dark currents. Optical simulation proves that the metal stacks used for wafer bonding serve as a back-reflector and enhance GaAs photodetector responsivity via a resonant-cavity effect. Device durability was also tested by bending 1000 times and no performance degradation was observed. This work paves a way for a cost-effective and flexible III-V optoelectronics technology with high durability.

Original languageEnglish
Pages (from-to)35559-35567
Number of pages9
JournalOptics Express
Volume28
Issue number24
DOIs
Publication statusPublished - 2020 Nov 23

Bibliographical note

Publisher Copyright:
© 2020 Optical Society of America.

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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