Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor

Minwoo Choi; Yong Ju Park; Bhupendra K. Sharma; Sa Rang Bae; Soo Young Kim; Jong Hyun Ahn

doi:10.1126/sciadv.aas8721

Flexible active-matrix organic light-emitting diode display enabled by MoS₂ thin-film transistor

Minwoo Choi, Yong Ju Park, Bhupendra K. Sharma, Sa Rang Bae, Soo Young Kim, Jong Hyun Ahn

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

156 Citations (Scopus)

Abstract

Atomically thin molybdenum disulfide (MoS₂) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS₂ interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al₂O₃ layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.

Original language	English
Article number	eaas8721
Journal	Science Advances
Volume	4
Issue number	4
DOIs	https://doi.org/10.1126/sciadv.aas8721
Publication status	Published - 2018 Apr 20

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF-2015R1A3A2066337). Author contributions: J.-H.A. planned and supervised the project. S.Y.K. co-supervised the project. B.K.S. advised and supported the project. M.C. and Y.J.P. conducted most of the experiments regarding the device fabrication and characterization. S.-R.B. interpreted the data and supported OLED part experiment. All authors analyzed the data and wrote the manuscript. Competing interests: J.-H.A. and Y.J.P. are inventors on a Korean patent application related to this work filed by Yonsei University (10-2017-0055578, 28 April 2017). The authors declare no other competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.

Publisher Copyright:
Copyright © 2018 The Authors.

All Science Journal Classification (ASJC) codes

General

Access to Document

10.1126/sciadv.aas8721

Cite this

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title = "Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor",

abstract = "Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.",

author = "Minwoo Choi and Park, {Yong Ju} and Sharma, {Bhupendra K.} and Bae, {Sa Rang} and Kim, {Soo Young} and Ahn, {Jong Hyun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF-2015R1A3A2066337). Author contributions: J.-H.A. planned and supervised the project. S.Y.K. co-supervised the project. B.K.S. advised and supported the project. M.C. and Y.J.P. conducted most of the experiments regarding the device fabrication and characterization. S.-R.B. interpreted the data and supported OLED part experiment. All authors analyzed the data and wrote the manuscript. Competing interests: J.-H.A. and Y.J.P. are inventors on a Korean patent application related to this work filed by Yonsei University (10-2017-0055578, 28 April 2017). The authors declare no other competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors. Publisher Copyright: Copyright {\textcopyright} 2018 The Authors.",

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N2 - Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.

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