Flat band voltage (VFB) modulation by controlling compositional depth profile in La2 O3 / HfO2 nanolaminate gate oxide

W. J. Maeng; Woo Hee Kim; Hyungjun Kim

doi:10.1063/1.3369388

Flat band voltage (VFB) modulation by controlling compositional depth profile in La₂ O₃ / HfO₂ nanolaminate gate oxide

W. J. Maeng, Woo Hee Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We investigated the flat band voltage (VFB) modulation by insertion of lanthanum oxide (La₂ O₃) into hafnium oxide (HfO ₂) gate dielectrics. The properties of La₂ O₃ / HfO₂ nanolaminates were precisely modulated by controlling the position of La₂ O₃ layer at bottom, middle, or top using atomic layer deposition. When the La₂ O₃ layer was positioned closer to the interface (bottom), the reduction in VFB shift was more effective than the other two cases (middle and top). From our experimental results, we propose that the main mechanism of VFB modulation using La ₂ O₃ layer is dipole moment formation at an interfacial layer between high k gate dielectric and Si substrate.

Original language	English
Article number	074109
Journal	Journal of Applied Physics
Volume	107
Issue number	7
DOIs	https://doi.org/10.1063/1.3369388
Publication status	Published - 2010 Apr 1

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. 2009-0083749 and 2009-0082853).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.3369388

Cite this

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title = "Flat band voltage (VFB) modulation by controlling compositional depth profile in La2 O3 / HfO2 nanolaminate gate oxide",

abstract = "We investigated the flat band voltage (VFB) modulation by insertion of lanthanum oxide (La2 O3) into hafnium oxide (HfO 2) gate dielectrics. The properties of La2 O3 / HfO2 nanolaminates were precisely modulated by controlling the position of La2 O3 layer at bottom, middle, or top using atomic layer deposition. When the La2 O3 layer was positioned closer to the interface (bottom), the reduction in VFB shift was more effective than the other two cases (middle and top). From our experimental results, we propose that the main mechanism of VFB modulation using La 2 O3 layer is dipole moment formation at an interfacial layer between high k gate dielectric and Si substrate.",

author = "Maeng, {W. J.} and Kim, {Woo Hee} and Hyungjun Kim",

note = "Funding Information: This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. 2009-0083749 and 2009-0082853).",

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AU - Kim, Hyungjun

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N2 - We investigated the flat band voltage (VFB) modulation by insertion of lanthanum oxide (La2 O3) into hafnium oxide (HfO 2) gate dielectrics. The properties of La2 O3 / HfO2 nanolaminates were precisely modulated by controlling the position of La2 O3 layer at bottom, middle, or top using atomic layer deposition. When the La2 O3 layer was positioned closer to the interface (bottom), the reduction in VFB shift was more effective than the other two cases (middle and top). From our experimental results, we propose that the main mechanism of VFB modulation using La 2 O3 layer is dipole moment formation at an interfacial layer between high k gate dielectric and Si substrate.

AB - We investigated the flat band voltage (VFB) modulation by insertion of lanthanum oxide (La2 O3) into hafnium oxide (HfO 2) gate dielectrics. The properties of La2 O3 / HfO2 nanolaminates were precisely modulated by controlling the position of La2 O3 layer at bottom, middle, or top using atomic layer deposition. When the La2 O3 layer was positioned closer to the interface (bottom), the reduction in VFB shift was more effective than the other two cases (middle and top). From our experimental results, we propose that the main mechanism of VFB modulation using La 2 O3 layer is dipole moment formation at an interfacial layer between high k gate dielectric and Si substrate.

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