The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO x/TiN stack. Set-CC-dependent scaling behavior with relations I reset '∼'R 0 -α and V reset '∼'R 0 -β differentiates BRS under low set-CC from other switching behaviors under high set-CC due to a low α and β involving a narrow filamentary path. Because such co-occurrence is observed only in the case of a high α and β involving a wide filamentary path, such a path can be classified into three different geometries according to switching behavior in detail. From the cyclic switching and a model simulation, we conclude that the reset of BRS originates from a narrower filamentary path near the top electrode than that of CRS due to the randomness of field-driven migration even under the same set-CC. Also, we conclude that URS originates from much narrower inversed conical filamentary path. Therefore, filament-geometry-dependent electric field and/or thermal effects can precisely describe the entire switching behaviors in this experiment.
Bibliographical noteFunding Information:
This research was supported by the National Research Project for the MOTIE (Ministry of Trade, Industry & Energy (project number 10045360)) and by the YSSRC program through Samsung Semiconductor Co.
This work is partially supported by the Korea Research Institute of Standards and Science under the Metrology Research Center project.
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