Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

J. M. Lee, K. I. Lee, J. Y. Chang, M. H. Ham, K. S. Huh, J. M. Myoung, W. J. Hwang, M. W. Shin, S. H. Han, H. J. Kim, W. Y. Lee

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1 Citation (Scopus)


The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

Original languageEnglish
Pages (from-to)283-287
Number of pages5
JournalMicroelectronic Engineering
Issue number2-4
Publication statusPublished - 2003 Sept

Bibliographical note

Funding Information:
This work was supported by the KIST Vision 21 Program.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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