Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

J. M. Lee; K. I. Lee; J. Y. Chang; M. H. Ham; K. S. Huh; J. M. Myoung; W. J. Hwang; M. W. Shin; S. H. Han; H. J. Kim; W. Y. Lee

doi:10.1016/S0167-9317(03)00311-3

Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

J. M. Lee, K. I. Lee, J. Y. Chang, M. H. Ham, K. S. Huh, J. M. Myoung, W. J. Hwang, M. W. Shin, S. H. Han, H. J. Kim, W. Y. Lee

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1 Citation (Scopus)

Abstract

The magnetic and magnetotransport properties of epitaxial (Ga _1-xMn_x)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T_c), providing T_c≈550 K and T_c≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

Original language	English
Pages (from-to)	283-287
Number of pages	5
Journal	Microelectronic Engineering
Volume	69
Issue number	2-4
DOIs	https://doi.org/10.1016/S0167-9317(03)00311-3
Publication status	Published - 2003 Sept

Bibliographical note

Funding Information:
This work was supported by the KIST Vision 21 Program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(03)00311-3

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@article{0565ba967b684071ba7c1a53801dd507,

title = "Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films",

abstract = "The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.",

author = "Lee, {J. M.} and Lee, {K. I.} and Chang, {J. Y.} and Ham, {M. H.} and Huh, {K. S.} and Myoung, {J. M.} and Hwang, {W. J.} and Shin, {M. W.} and Han, {S. H.} and Kim, {H. J.} and Lee, {W. Y.}",

note = "Funding Information: This work was supported by the KIST Vision 21 Program.",

year = "2003",

month = sep,

doi = "10.1016/S0167-9317(03)00311-3",

language = "English",

volume = "69",

pages = "283--287",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

AU - Lee, J. M.

AU - Lee, K. I.

AU - Chang, J. Y.

AU - Ham, M. H.

AU - Huh, K. S.

AU - Myoung, J. M.

AU - Hwang, W. J.

AU - Shin, M. W.

AU - Han, S. H.

AU - Kim, H. J.

AU - Lee, W. Y.

N1 - Funding Information: This work was supported by the KIST Vision 21 Program.

PY - 2003/9

Y1 - 2003/9

N2 - The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

AB - The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

UR - http://www.scopus.com/inward/record.url?scp=0141858716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141858716&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(03)00311-3

DO - 10.1016/S0167-9317(03)00311-3

M3 - Article

AN - SCOPUS:0141858716

SN - 0167-9317

VL - 69

SP - 283

EP - 287

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 2-4

ER -

Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

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All Science Journal Classification (ASJC) codes

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