Ferroelectric property improvement of poly(vinylidene fluoride/ trifluoroethylene) polymer exposed to a plasma ambient

C. H. Park; Kwang H. Lee; Taewoo Ha; Jae Hoon Kim; Seongil Im; Jungheum Yun; Gun Hwan Lee

doi:10.1063/1.3505336

Ferroelectric property improvement of poly(vinylidene fluoride/ trifluoroethylene) polymer exposed to a plasma ambient

C. H. Park, Kwang H. Lee, Taewoo Ha, Jae Hoon Kim, Seongil Im, Jungheum Yun, Gun Hwan Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report a dramatic property improvement of ferroelectric polymer poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] upon exposure to a plasma ambient. The P(VDF-TrFE) layer for typical nonvolatile memory devices shows only ∼6.5 μC/ cm² and 0.55 MV/cm for its remnant polarization and coercive field, respectively, but the values increase to ∼13 xμC/ cm² and ∼1 MV/cm after an optimum period of plasma exposure. Our infrared measurement confirms that the plasma energy creates many CC double bonds in the polymer chain while removing some of CF bonds, which are responsible for ferroelectric polarization. Nevertheless, the strengthened polymer can incorporate higher applied field, thereby aligning electric dipoles much better.

Original language	English
Article number	162911
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3505336
Publication status	Published - 2010 Oct 18

Bibliographical note

Funding Information:
Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2010-0000808), from the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2006-S-079-05, and Brain Korea 21 Program. C. H. Park thanks for the Seoul Science Fellowship and Seoam Fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Ferroelectric property improvement of poly(vinylidene fluoride/ trifluoroethylene) polymer exposed to a plasma ambient",

abstract = "We report a dramatic property improvement of ferroelectric polymer poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] upon exposure to a plasma ambient. The P(VDF-TrFE) layer for typical nonvolatile memory devices shows only ∼6.5 μC/ cm2 and 0.55 MV/cm for its remnant polarization and coercive field, respectively, but the values increase to ∼13 xμC/ cm2 and ∼1 MV/cm after an optimum period of plasma exposure. Our infrared measurement confirms that the plasma energy creates many CC double bonds in the polymer chain while removing some of CF bonds, which are responsible for ferroelectric polarization. Nevertheless, the strengthened polymer can incorporate higher applied field, thereby aligning electric dipoles much better.",

author = "Park, {C. H.} and Lee, {Kwang H.} and Taewoo Ha and Kim, {Jae Hoon} and Seongil Im and Jungheum Yun and Lee, {Gun Hwan}",

note = "Funding Information: Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2010-0000808), from the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2006-S-079-05, and Brain Korea 21 Program. C. H. Park thanks for the Seoul Science Fellowship and Seoam Fellowship. ",

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AU - Park, C. H.

AU - Lee, Kwang H.

AU - Ha, Taewoo

AU - Kim, Jae Hoon

AU - Im, Seongil

AU - Yun, Jungheum

AU - Lee, Gun Hwan

N1 - Funding Information: Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2010-0000808), from the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2006-S-079-05, and Brain Korea 21 Program. C. H. Park thanks for the Seoul Science Fellowship and Seoam Fellowship.

PY - 2010/10/18

Y1 - 2010/10/18

N2 - We report a dramatic property improvement of ferroelectric polymer poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] upon exposure to a plasma ambient. The P(VDF-TrFE) layer for typical nonvolatile memory devices shows only ∼6.5 μC/ cm2 and 0.55 MV/cm for its remnant polarization and coercive field, respectively, but the values increase to ∼13 xμC/ cm2 and ∼1 MV/cm after an optimum period of plasma exposure. Our infrared measurement confirms that the plasma energy creates many CC double bonds in the polymer chain while removing some of CF bonds, which are responsible for ferroelectric polarization. Nevertheless, the strengthened polymer can incorporate higher applied field, thereby aligning electric dipoles much better.

AB - We report a dramatic property improvement of ferroelectric polymer poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] upon exposure to a plasma ambient. The P(VDF-TrFE) layer for typical nonvolatile memory devices shows only ∼6.5 μC/ cm2 and 0.55 MV/cm for its remnant polarization and coercive field, respectively, but the values increase to ∼13 xμC/ cm2 and ∼1 MV/cm after an optimum period of plasma exposure. Our infrared measurement confirms that the plasma energy creates many CC double bonds in the polymer chain while removing some of CF bonds, which are responsible for ferroelectric polarization. Nevertheless, the strengthened polymer can incorporate higher applied field, thereby aligning electric dipoles much better.

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Ferroelectric property improvement of poly(vinylidene fluoride/ trifluoroethylene) polymer exposed to a plasma ambient

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