Ferroelectric properties of direct-patterned half-micron thick PZT film

Sang Woo Bae, Hyung Ho Park, Tae Song Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Ferroelectric properties of direct-patterned PZT(PbZr 0.52Ti 0.48O 3) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.

Original languageEnglish
Pages (from-to)548-552
Number of pages5
JournalSensors and Actuators, A: Physical
Issue number2
Publication statusPublished - 2006 Jan 10

Bibliographical note

Funding Information:
This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


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