Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

Young Tack Lee; Pyo Jin Jeon; Kwang H. Lee; Ryong Ha; Heon Jin Choi; Seongil Im

doi:10.1002/adma.201201051

Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

Young Tack Lee, Pyo Jin Jeon, Kwang H. Lee, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.

Original language	English
Pages (from-to)	3020-3025
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	22
DOIs	https://doi.org/10.1002/adma.201201051
Publication status	Published - 2012 Jun 12

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201201051

Cite this

@article{9ee5bcffe6bc4ae791a5c6f44053c0b4,

title = "Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer",

abstract = "A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.",

author = "Lee, {Young Tack} and Jeon, {Pyo Jin} and Lee, {Kwang H.} and Ryong Ha and Choi, {Heon Jin} and Seongil Im",

year = "2012",

month = jun,

day = "12",

doi = "10.1002/adma.201201051",

language = "English",

volume = "24",

pages = "3020--3025",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "22",

}

TY - JOUR

T1 - Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

AU - Lee, Young Tack

AU - Jeon, Pyo Jin

AU - Lee, Kwang H.

AU - Ha, Ryong

AU - Choi, Heon Jin

AU - Im, Seongil

PY - 2012/6/12

Y1 - 2012/6/12

N2 - A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.

AB - A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.

UR - http://www.scopus.com/inward/record.url?scp=84861837606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861837606&partnerID=8YFLogxK

U2 - 10.1002/adma.201201051

DO - 10.1002/adma.201201051

M3 - Article

C2 - 22549908

AN - SCOPUS:84861837606

SN - 0935-9648

VL - 24

SP - 3020

EP - 3025

JO - Advanced Materials

JF - Advanced Materials

IS - 22

ER -

Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this