Ferroelectric-gate field effect transistors using Nd2Ti2O7/Y2O3/Si structures

Sik Kim Woo Sik Kim, S. M. Ha, J. K. Yang, H. H. Park

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)


Ferroelectric field effect devices offer the possibility of non-volatile active memory elements. In the metal-ferroelectric-semiconductor field effect transistor, it is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric film. In this work, we report the fabrication and characterization of a ferroelectric-gate field effect transistor using Nd2Ti2O7(NTO)/Y2 O3/Si structures. The crystalline property of the film as a function of annealing temperature was characterized by X-ray diffraction. C-V characteristics were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. As a result, the memory windows were in the range of 0.98-3.31 V when the applied voltage varied from 3 to 9 V. Specifically, we confirmed the ferroelectricity of crystallized NTO films.

Original languageEnglish
Pages (from-to)663-667
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2001 Nov
Event28th International Conference on Metallurgia - San Diego,CA, United States
Duration: 2001 Apr 302001 May 30

Bibliographical note

Funding Information:
This work was supported by grant No. 2000-1-30100-016-3 from the Basic Research Program of the Korea Science & Engineering Foundation and Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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