Ferroelectric field effect devices offer the possibility of non-volatile active memory elements. In the metal-ferroelectric-semiconductor field effect transistor, it is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric film. In this work, we report the fabrication and characterization of a ferroelectric-gate field effect transistor using Nd2Ti2O7(NTO)/Y2 O3/Si structures. The crystalline property of the film as a function of annealing temperature was characterized by X-ray diffraction. C-V characteristics were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. As a result, the memory windows were in the range of 0.98-3.31 V when the applied voltage varied from 3 to 9 V. Specifically, we confirmed the ferroelectricity of crystallized NTO films.
|Number of pages||5|
|Journal||Thin Solid Films|
|Publication status||Published - 2001 Nov|
|Event||28th International Conference on Metallurgia - San Diego,CA, United States|
Duration: 2001 Apr 30 → 2001 May 30
Bibliographical noteFunding Information:
This work was supported by grant No. 2000-1-30100-016-3 from the Basic Research Program of the Korea Science & Engineering Foundation and Brain Korea 21 project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry