TY - JOUR
T1 - Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation
AU - Kim, Sekeon
AU - Lim, Sehee
AU - Ko, Dong Han
AU - Oh, Tae Woo
AU - Jung, Seong Ook
N1 - Publisher Copyright:
© 2004-2012 IEEE.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - Nonvolatile processors (NVPs) are promising for energy-constrained internet-of-things applications in which frequent switch to standby mode occurs due to their fast and energy-efficient backup and restore operations of locally embedded nonvolatile flip-flops (NV-FFs) with zero leakage current. In addition, the most effective method to reduce dynamic energy consumption is to lower the supply voltage (VD D). The senseamplifier-based flip-flop (SAFF) is considered a suitable choice for the low VD D operation, since it does not suffer from setup time degradation as VD D lowers. This study presents two ferroelectric FET (FeFET) nonvolatile SAFFs (FeFET NV-SAFF-1 and -2) that exhibit significantly low sequencing overhead (setup time + clock-to-Q time) at low VDD and consume low operating energy in the range of femto joules with compact layout area. The FeFET NV-SAFF-1 can operate robustly at low VDD even with a low resistance ratio. The FeFET NV-SAFF-2 has no area overhead and achieves the best power-performance-area at low VDD among state-of-the-art and proposed FeFET NV-FFs.
AB - Nonvolatile processors (NVPs) are promising for energy-constrained internet-of-things applications in which frequent switch to standby mode occurs due to their fast and energy-efficient backup and restore operations of locally embedded nonvolatile flip-flops (NV-FFs) with zero leakage current. In addition, the most effective method to reduce dynamic energy consumption is to lower the supply voltage (VD D). The senseamplifier-based flip-flop (SAFF) is considered a suitable choice for the low VD D operation, since it does not suffer from setup time degradation as VD D lowers. This study presents two ferroelectric FET (FeFET) nonvolatile SAFFs (FeFET NV-SAFF-1 and -2) that exhibit significantly low sequencing overhead (setup time + clock-to-Q time) at low VDD and consume low operating energy in the range of femto joules with compact layout area. The FeFET NV-SAFF-1 can operate robustly at low VDD even with a low resistance ratio. The FeFET NV-SAFF-2 has no area overhead and achieves the best power-performance-area at low VDD among state-of-the-art and proposed FeFET NV-FFs.
KW - Energy-harvesting
KW - Internet of Things
KW - ferroelectric field-effect transistor (FeFET)
KW - nonvolatile flip-flop
KW - nonvolatile processor
KW - sense-amplifier-based flip-flop
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U2 - 10.1109/TCSI.2023.3327294
DO - 10.1109/TCSI.2023.3327294
M3 - Article
AN - SCOPUS:85181557811
SN - 1549-8328
VL - 71
SP - 274
EP - 286
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 1
ER -