Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation

Sekeon Kim, Sehee Lim, Dong Han Ko, Tae Woo Oh, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Nonvolatile processors (NVPs) are promising for energy-constrained internet-of-things applications in which frequent switch to standby mode occurs due to their fast and energy-efficient backup and restore operations of locally embedded nonvolatile flip-flops (NV-FFs) with zero leakage current. In addition, the most effective method to reduce dynamic energy consumption is to lower the supply voltage (VD D). The senseamplifier-based flip-flop (SAFF) is considered a suitable choice for the low VD D operation, since it does not suffer from setup time degradation as VD D lowers. This study presents two ferroelectric FET (FeFET) nonvolatile SAFFs (FeFET NV-SAFF-1 and -2) that exhibit significantly low sequencing overhead (setup time + clock-to-Q time) at low VDD and consume low operating energy in the range of femto joules with compact layout area. The FeFET NV-SAFF-1 can operate robustly at low VDD even with a low resistance ratio. The FeFET NV-SAFF-2 has no area overhead and achieves the best power-performance-area at low VDD among state-of-the-art and proposed FeFET NV-FFs.

Original languageEnglish
Pages (from-to)274-286
Number of pages13
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume71
Issue number1
DOIs
Publication statusPublished - 2024 Jan 1

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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