Abstract
Fast and stable zinctinoxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 ± 0.29 cm2/ V ċ s (W/L = 100/10 μm) and subthreshold slope < 0.4 ± 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of ∼800 kHz with a supply voltage VDD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.
| Original language | English |
|---|---|
| Article number | 5716661 |
| Pages (from-to) | 524-526 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Apr |
Bibliographical note
Funding Information:Manuscript received November 29, 2010; revised January 4, 2011; accepted January 11, 2011. Date of publication February 22, 2011; date of current version March 23, 2011. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. 2010-0002623) and the research funds of Chonbuk National University 2009. The review of this letter was arranged by Editor A. Nathan.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering