Fast and efficient STT switching in MTJ using additional transient pulse current

Sachin Pathak, Jongin Cha, Kangwook Jo, Hongil Yoon, Jongill Hong

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Original languageEnglish
Article number232401
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2017 Jun 5

Bibliographical note

Publisher Copyright:
© 2017 Author(s).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Fast and efficient STT switching in MTJ using additional transient pulse current'. Together they form a unique fingerprint.

Cite this