Facet evolution of selectively grown epitaxial Si1−                             xGex fin layers in sub-100 nm trench arrays

Hyunchul Jang; Sangmo Koo; Dae Seop Byeon; Yongjoon Choi; Dae Hong Ko

doi:10.1016/j.jcrysgro.2019.125429

Facet evolution of selectively grown epitaxial Si₁₋ _xGe_x fin layers in sub-100 nm trench arrays

Hyunchul Jang, Sangmo Koo, Dae Seop Byeon, Yongjoon Choi, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We selectively grew epitaxial Si₁₋ _xGe_x fin layers with x in the range of 0.36–0.63 in oxide trench arrays with trench width of 40, 65, and 90 nm. The dominant facet of the Si₁₋ _xGe_x layers changed from {1 1 1} to {1 1 3} at x = 0.56, and three types of facets were found for the layers with Ge content in the observed range. The relationship between the facet evolution and the growth rate of the facets was investigated. Blanket Si₁₋ _xGe_x layers grown on three substrates with orientations of (0 0 1), (1 1 1), and (1 1 3) were used for comparing the growth rate of each facet during the facet evolution. The results obtained for the blanket layers were found to be consistent with the facet evolutions in the Si₁₋ _xGe_x fin layers with Ge content in the range of 0.36–0.63.

Original language	English
Article number	125429
Journal	Journal of Crystal Growth
Volume	532
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.125429
Publication status	Published - 2020 Feb 15

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2019.125429

Cite this

@article{eccb73b958cc431d9a3d5a666f604991,

title = "Facet evolution of selectively grown epitaxial Si1− xGex fin layers in sub-100 nm trench arrays",

abstract = "We selectively grew epitaxial Si1− xGex fin layers with x in the range of 0.36–0.63 in oxide trench arrays with trench width of 40, 65, and 90 nm. The dominant facet of the Si1− xGex layers changed from {1 1 1} to {1 1 3} at x = 0.56, and three types of facets were found for the layers with Ge content in the observed range. The relationship between the facet evolution and the growth rate of the facets was investigated. Blanket Si1− xGex layers grown on three substrates with orientations of (0 0 1), (1 1 1), and (1 1 3) were used for comparing the growth rate of each facet during the facet evolution. The results obtained for the blanket layers were found to be consistent with the facet evolutions in the Si1− xGex fin layers with Ge content in the range of 0.36–0.63.",

keywords = "A1. Crystal morphology, A1. Substrates, A3. Chemicalvapour deposition system, A3. Selective epitaxy, B1. Germanium silicon alloys",

author = "Hyunchul Jang and Sangmo Koo and Byeon, {Dae Seop} and Yongjoon Choi and Ko, {Dae Hong}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = feb,

day = "15",

doi = "10.1016/j.jcrysgro.2019.125429",

language = "English",

volume = "532",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Facet evolution of selectively grown epitaxial Si1− xGex fin layers in sub-100 nm trench arrays

AU - Jang, Hyunchul

AU - Koo, Sangmo

AU - Byeon, Dae Seop

AU - Choi, Yongjoon

AU - Ko, Dae Hong

PY - 2020/2/15

Y1 - 2020/2/15

N2 - We selectively grew epitaxial Si1− xGex fin layers with x in the range of 0.36–0.63 in oxide trench arrays with trench width of 40, 65, and 90 nm. The dominant facet of the Si1− xGex layers changed from {1 1 1} to {1 1 3} at x = 0.56, and three types of facets were found for the layers with Ge content in the observed range. The relationship between the facet evolution and the growth rate of the facets was investigated. Blanket Si1− xGex layers grown on three substrates with orientations of (0 0 1), (1 1 1), and (1 1 3) were used for comparing the growth rate of each facet during the facet evolution. The results obtained for the blanket layers were found to be consistent with the facet evolutions in the Si1− xGex fin layers with Ge content in the range of 0.36–0.63.

AB - We selectively grew epitaxial Si1− xGex fin layers with x in the range of 0.36–0.63 in oxide trench arrays with trench width of 40, 65, and 90 nm. The dominant facet of the Si1− xGex layers changed from {1 1 1} to {1 1 3} at x = 0.56, and three types of facets were found for the layers with Ge content in the observed range. The relationship between the facet evolution and the growth rate of the facets was investigated. Blanket Si1− xGex layers grown on three substrates with orientations of (0 0 1), (1 1 1), and (1 1 3) were used for comparing the growth rate of each facet during the facet evolution. The results obtained for the blanket layers were found to be consistent with the facet evolutions in the Si1− xGex fin layers with Ge content in the range of 0.36–0.63.

KW - A1. Crystal morphology

KW - A1. Substrates

KW - A3. Chemicalvapour deposition system

KW - A3. Selective epitaxy

KW - B1. Germanium silicon alloys

UR - http://www.scopus.com/inward/record.url?scp=85076980881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076980881&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.125429

DO - 10.1016/j.jcrysgro.2019.125429

M3 - Article

AN - SCOPUS:85076980881

SN - 0022-0248

VL - 532

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 125429

ER -