Fabrication of transparent nanocrystalline InGaO 3(ZnO) 2 thin films using a solution process

Kyung Ho Kim; Gun Hee Kim; Hyun Jae Kim

doi:10.1002/pssa.200983705

Fabrication of transparent nanocrystalline InGaO ₃(ZnO) ₂ thin films using a solution process

Kyung Ho Kim, Gun Hee Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We used a solution process to fabricate transparent nanocrystalline (nc) InGaO ₃(ZnO) ₂ thin films on a glass substrate. The formation of the nanocrystals resulted from a self-solid phase reaction (S-SPR). The nanocrystals began to form at a temperature of ̃300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc-InGaO ₃(ZnO) ₂ thin film was ̃92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO ₃(ZnO) ₂ thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc-InGaO ₃(ZnO) ₂ thin film.

Original language	English
Pages (from-to)	1660-1663
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200983705
Publication status	Published - 2010 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

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10.1002/pssa.200983705

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abstract = "We used a solution process to fabricate transparent nanocrystalline (nc) InGaO 3(ZnO) 2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self-solid phase reaction (S-SPR). The nanocrystals began to form at a temperature of{\~ }300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc-InGaO 3(ZnO) 2 thin film was{\~ }92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO 3(ZnO) 2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc-InGaO 3(ZnO) 2 thin film.",

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AU - Kim, Kyung Ho

AU - Kim, Gun Hee

AU - Kim, Hyun Jae

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Y1 - 2010/7

N2 - We used a solution process to fabricate transparent nanocrystalline (nc) InGaO 3(ZnO) 2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self-solid phase reaction (S-SPR). The nanocrystals began to form at a temperature of ̃300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc-InGaO 3(ZnO) 2 thin film was ̃92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO 3(ZnO) 2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc-InGaO 3(ZnO) 2 thin film.

AB - We used a solution process to fabricate transparent nanocrystalline (nc) InGaO 3(ZnO) 2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self-solid phase reaction (S-SPR). The nanocrystals began to form at a temperature of ̃300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc-InGaO 3(ZnO) 2 thin film was ̃92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO 3(ZnO) 2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc-InGaO 3(ZnO) 2 thin film.

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Fabrication of transparent nanocrystalline InGaO ₃(ZnO) ₂ thin films using a solution process

Abstract

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