Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

Gun Hee Kim; Hyun Soo Shin; Kyung Ho Kim; Won Jun Park; Yoon Jung Choi; Byung Du Ahn; Hyun Jae Kim

doi:10.1889/1.3069366

Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

Gun Hee Kim, Hyun Soo Shin, Kyung Ho Kim, Won Jun Park, Yoon Jung Choi, Byung Du Ahn, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×10⁵ and field effect mobility of ̃0.96 cm ²/Vs, respectively.

Original language	English
Pages (from-to)	1258-1261
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	3
DOIs	https://doi.org/10.1889/1.3069366
Publication status	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 2008 May 20 → 2008 May 21

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1889/1.3069366

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title = "Fabrication of solution processed inGZnO thin film transistor for active matrix backplane",

abstract = "We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of{\~ }1.88×105 and field effect mobility of{\~ }0.96 cm 2/Vs, respectively.",

author = "Kim, {Gun Hee} and Shin, {Hyun Soo} and Kim, {Kyung Ho} and Park, {Won Jun} and Choi, {Yoon Jung} and Ahn, {Byung Du} and Kim, {Hyun Jae}",

year = "2008",

doi = "10.1889/1.3069366",

language = "English",

volume = "39",

pages = "1258--1261",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "3",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

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TY - JOUR

T1 - Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

AU - Kim, Gun Hee

AU - Shin, Hyun Soo

AU - Kim, Kyung Ho

AU - Park, Won Jun

AU - Choi, Yoon Jung

AU - Ahn, Byung Du

AU - Kim, Hyun Jae

PY - 2008

Y1 - 2008

N2 - We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.

AB - We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.

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U2 - 10.1889/1.3069366

DO - 10.1889/1.3069366

M3 - Conference article

AN - SCOPUS:54549110006

SN - 0097-966X

VL - 39

SP - 1258

EP - 1261

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

Abstract

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