Fabrication of single-phase SnS film by H2 annealing of amorphous SnSx prepared by atomic layer deposition

Byeonghyeon Jang, Seungmin Yeo, Hyungjun Kim, Byungha Shin, Soo Hyun Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

This study evaluated a simple and novel route to fabricate single-phase SnS thin films, consisting of the growth of smooth amorphous SnS2 films by atomic layer deposition at very low temperature using tetrakis(dimethylamino)tin {TDMASn, [(CH3)2N]4Sn} and hydrogen sulfide followed by H2 annealing at controlled higher temperatures. The properties of the SnS films fabricated by subjecting the amorphous as-grown SnS2 films deposited at 100 ℃ to post-H2 annealing at 360 ℃ were superior to those of the as-grown SnS films deposited at 200 ℃ in terms of their phase purity, optical band gap, adhesion, and surface roughness. Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and atomic force microscopy consistently showed that single-phase, stoichiometric crystalline (orthorhombic structure) SnS films (Sn/S ratio: ~1), without any incorporated sulfur-rich tin sulfides, could be fabricated with a very low surface roughness [root mean square (RMS) roughness: ~7 nm] using the proposed scheme. On the other hand, the as-grown SnS film at 200 ℃ still contained a small amount of SnS2 phase and its RMS surface roughness was as high as 16 nm. The optical band gap of the as-grown SnS film was 1.85 eV, whereas that of the annealed SnS film was ~1.2 eV, confirming the latter's improved phase purity. The SnS film fabricated by H2 annealing was a p-type semiconductor with a carrier concentration of ~2.3 × 1016/cm3 and a hole mobility of ~15 cm2/V s. The present scheme to prepare high-quality SnS films might be useful for fabricating photovoltaic or solar conversion devices.

Original languageEnglish
Article number031506
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume35
Issue number3
DOIs
Publication statusPublished - 2017

Bibliographical note

Publisher Copyright:
© 2017 American Vacuum Society.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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