Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces

Dongwoo Kim; Yeong Gyu Kim; Jusung Chung; Byung Ha Kang; Jin Hyeok Lee; Hyun Jae Kim

doi:10.1002/sdtp.12140

Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces

Dongwoo Kim, Yeong Gyu Kim, Jusung Chung, Byung Ha Kang, Jin Hyeok Lee, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO₂) and titanium dioxide (TiO₂) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 10⁵.

Original language	English
Pages (from-to)	1260-1263
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	49
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.12140
Publication status	Published - 2018
Event	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 2018 May 20 → 2018 May 25

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2017R1A2B3008719).

Publisher Copyright:
© 2018, Blackwell Publishing Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.12140

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title = "Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces",

abstract = "This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO2) and titanium dioxide (TiO2) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 105.",

author = "Dongwoo Kim and Kim, {Yeong Gyu} and Jusung Chung and Kang, {Byung Ha} and Lee, {Jin Hyeok} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2017R1A2B3008719). Publisher Copyright: {\textcopyright} 2018, Blackwell Publishing Ltd. All rights reserved.; SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 ; Conference date: 20-05-2018 Through 25-05-2018",

year = "2018",

doi = "10.1002/sdtp.12140",

language = "English",

volume = "49",

pages = "1260--1263",

journal = "Digest of Technical Papers - SID International Symposium",

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T1 - Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces

AU - Kim, Dongwoo

AU - Kim, Yeong Gyu

AU - Chung, Jusung

AU - Kang, Byung Ha

AU - Lee, Jin Hyeok

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2017R1A2B3008719). Publisher Copyright: © 2018, Blackwell Publishing Ltd. All rights reserved.

PY - 2018

Y1 - 2018

N2 - This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO2) and titanium dioxide (TiO2) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 105.

AB - This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO2) and titanium dioxide (TiO2) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 105.

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2018, Display Week 2018

Y2 - 20 May 2018 through 25 May 2018

ER -

Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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