This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO2) and titanium dioxide (TiO2) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 105.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2018|
|Event||SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States|
Duration: 2018 May 20 → 2018 May 25
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2017R1A2B3008719).
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