Fabrication of Nitrocellulose based Organic Material as a Gate Dielectric Layer for Oxide Thin Film Transistor

Won Gi Kim, Young Jun Tak, Yeong Gyu Kim, Jusung Chung, Byung Ha Kang, Hyun Jae Kim

Research output: Contribution to journalConference articlepeer-review

Abstract

We proposed a novel organic material, named collodion, as a gate dielectric layer for amorphous indium gallium zinc oxide thin film transistor. The collodion was fabricated at low temperature (125oC) and had superior dielectric characteristics (10-10 A/cm2 at 50 V) and dielectric constant (~6.57) for gate dielectric layer.

Original languageEnglish
Pages (from-to)1356-1358
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume48
Issue number1
DOIs
Publication statusPublished - 2017
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: 2017 May 212017 May 26

Bibliographical note

Publisher Copyright:
© 2017 SID.

All Science Journal Classification (ASJC) codes

  • General Engineering

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