The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.
Bibliographical noteFunding Information:
This work is financially supported by Samsung Electronics and the Korean Ministry of Knowledge and Economy (MKE) under the National Research Project of Phase-Change Random Access Memory Development.
All Science Journal Classification (ASJC) codes
- General Materials Science
- General Physics and Astronomy