Multi-layer CVD-SiC films that have granular type and faceted structures were successfully fabricated by manipulating the input gas ratio in a continuous process. The surface morphology of the multilayer depended on the microstructure of the bottom layer. From TEM analysis, abnormal growth was found at α = 4.
Bibliographical noteFunding Information:
The authors acknowledge the support of the Korean Ministry of Commerce, Industry and Energy research fund for industry foundation technology development work.
All Science Journal Classification (ASJC) codes
- General Materials Science