TY - JOUR
T1 - Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent
AU - Sun, Ho Jung
AU - Kim, Younsoo
AU - Park, Sung Eon
AU - Hong, Kwon
AU - Roh, Jae Sung
AU - Sohn, Hyun Chul
PY - 2004/8
Y1 - 2004/8
N2 - We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.
AB - We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.
UR - http://www.scopus.com/inward/record.url?scp=6344249053&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=6344249053&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.5482
DO - 10.1143/JJAP.43.5482
M3 - Article
AN - SCOPUS:6344249053
SN - 0021-4922
VL - 43
SP - 5482
EP - 5486
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 8 A
ER -