Fabrication of GaN/GaN:Mn core/shell nanowires and their photoluminescences

Ungkil Kim; Han Kyu Seong; Myoung Ha Kim; Heon Jin Choi

doi:10.1016/j.matlet.2008.09.025

Fabrication of GaN/GaN:Mn core/shell nanowires and their photoluminescences

Ungkil Kim, Han Kyu Seong, Myoung Ha Kim, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on the fabrication of GaN/GaN:Mn core/shell nanowires (NWs) using a two-step metalorganic chemcial vapor deposition (MOCVD) and chloride-based chemical vapor transport (CVT) process. Structural analyses indicated that the heterostructure NWs were single crystalline and exhibited a core/shell and lozenge structure. The photoluminescence (PL) of the core/shell NWs showed a peak at a center wavelength of 454 nm, which was red-shifted compared to those of GaN and GaN:Mn NWs. This outcome indicates the accumulation of excited carriers at the interfaces that would be helpful in developing novel magnetism in diluted magnetic GaN:Mn semiconductors.

Original language	English
Pages (from-to)	97-99
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	1
DOIs	https://doi.org/10.1016/j.matlet.2008.09.025
Publication status	Published - 2009 Jan 15

Bibliographical note

Funding Information:
This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2008.09.025

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title = "Fabrication of GaN/GaN:Mn core/shell nanowires and their photoluminescences",

abstract = "We report on the fabrication of GaN/GaN:Mn core/shell nanowires (NWs) using a two-step metalorganic chemcial vapor deposition (MOCVD) and chloride-based chemical vapor transport (CVT) process. Structural analyses indicated that the heterostructure NWs were single crystalline and exhibited a core/shell and lozenge structure. The photoluminescence (PL) of the core/shell NWs showed a peak at a center wavelength of 454 nm, which was red-shifted compared to those of GaN and GaN:Mn NWs. This outcome indicates the accumulation of excited carriers at the interfaces that would be helpful in developing novel magnetism in diluted magnetic GaN:Mn semiconductors.",

author = "Ungkil Kim and Seong, {Han Kyu} and Kim, {Myoung Ha} and Choi, {Heon Jin}",

note = "Funding Information: This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0).",

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doi = "10.1016/j.matlet.2008.09.025",

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AU - Kim, Ungkil

AU - Seong, Han Kyu

AU - Kim, Myoung Ha

AU - Choi, Heon Jin

N1 - Funding Information: This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0).

PY - 2009/1/15

Y1 - 2009/1/15

N2 - We report on the fabrication of GaN/GaN:Mn core/shell nanowires (NWs) using a two-step metalorganic chemcial vapor deposition (MOCVD) and chloride-based chemical vapor transport (CVT) process. Structural analyses indicated that the heterostructure NWs were single crystalline and exhibited a core/shell and lozenge structure. The photoluminescence (PL) of the core/shell NWs showed a peak at a center wavelength of 454 nm, which was red-shifted compared to those of GaN and GaN:Mn NWs. This outcome indicates the accumulation of excited carriers at the interfaces that would be helpful in developing novel magnetism in diluted magnetic GaN:Mn semiconductors.

AB - We report on the fabrication of GaN/GaN:Mn core/shell nanowires (NWs) using a two-step metalorganic chemcial vapor deposition (MOCVD) and chloride-based chemical vapor transport (CVT) process. Structural analyses indicated that the heterostructure NWs were single crystalline and exhibited a core/shell and lozenge structure. The photoluminescence (PL) of the core/shell NWs showed a peak at a center wavelength of 454 nm, which was red-shifted compared to those of GaN and GaN:Mn NWs. This outcome indicates the accumulation of excited carriers at the interfaces that would be helpful in developing novel magnetism in diluted magnetic GaN:Mn semiconductors.

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Fabrication of GaN/GaN:Mn core/shell nanowires and their photoluminescences

Abstract

Bibliographical note

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