Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) Si substrate using a 1-nm InAs relief layer

H. J. Oh; S. J. Park; J. Y. Lim; N. K. Cho; J. D. Song; W. Lee; Y. J. Lee; J. M. Myoung; W. J. Choi

doi:10.1166/jnn.2014.8593

Fabrication of GaAs/Al_0.3Ga_0.7As multiple quantum well nanostructures on (100) Si substrate using a 1-nm InAs relief layer

H. J. Oh, S. J. Park, J. Y. Lim, N. K. Cho, J. D. Song, W. Lee, Y. J. Lee, J. M. Myoung, W. J. Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al_0.3Ga_0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Original language	English
Pages (from-to)	2984-2989
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	4
DOIs	https://doi.org/10.1166/jnn.2014.8593
Publication status	Published - 2014 Apr

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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title = "Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) Si substrate using a 1-nm InAs relief layer",

abstract = "Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.",

author = "Oh, {H. J.} and Park, {S. J.} and Lim, {J. Y.} and Cho, {N. K.} and Song, {J. D.} and W. Lee and Lee, {Y. J.} and Myoung, {J. M.} and Choi, {W. J.}",

year = "2014",

month = apr,

doi = "10.1166/jnn.2014.8593",

language = "English",

volume = "14",

pages = "2984--2989",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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AU - Oh, H. J.

AU - Park, S. J.

AU - Lim, J. Y.

AU - Cho, N. K.

AU - Song, J. D.

AU - Lee, W.

AU - Lee, Y. J.

AU - Myoung, J. M.

AU - Choi, W. J.

PY - 2014/4

Y1 - 2014/4

N2 - Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

AB - Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

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Fabrication of GaAs/Al_0.3Ga_0.7As multiple quantum well nanostructures on (100) Si substrate using a 1-nm InAs relief layer

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