Fabrication of Coaxial Si 1-xGe x Heterostructure Nanowires by O 2 Flow-Induced Bifurcate Reactions

Ilsoo Kim, Ki Young Lee, Ungkil Kim, Yong Hee Park, Tae Eon Park, Heon Jin Choi

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1 Citation (Scopus)


We report on bifurcate reactions on the surface of well-aligned Si 1-xGe x nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si 1-xGe x nanowires were grown in a chemical vapor transport process using SiCl 4 gas and Ge powder as a source. After the growth of nanowires, SiCl 4 flow was terminated while O 2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO 2 by the O 2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O 2 pressure without any intermediate region and enables selectively fabricated Ge/Si 1-xGe x or SiO 2/Si 1-xGe x coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

Original languageEnglish
Pages (from-to)1535-1539
Number of pages5
JournalNanoscale Research Letters
Issue number10
Publication statusPublished - 2010

Bibliographical note

Funding Information:
Acknowledgments This research was supported by a grant from the National Research Laboratory program (R0A-2007-000-20075-0) and Nano R&D (Grant No. 2009-0082724) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science & Technology. This work was also supported by Hi Seoul Science (Humanities) Fellowship from Seoul Scholarship Foundation.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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