We report on bifurcate reactions on the surface of well-aligned Si 1-xGe x nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si 1-xGe x nanowires were grown in a chemical vapor transport process using SiCl 4 gas and Ge powder as a source. After the growth of nanowires, SiCl 4 flow was terminated while O 2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO 2 by the O 2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O 2 pressure without any intermediate region and enables selectively fabricated Ge/Si 1-xGe x or SiO 2/Si 1-xGe x coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.
|Number of pages||5|
|Journal||Nanoscale Research Letters|
|Publication status||Published - 2010|
Bibliographical noteFunding Information:
Acknowledgments This research was supported by a grant from the National Research Laboratory program (R0A-2007-000-20075-0) and Nano R&D (Grant No. 2009-0082724) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science & Technology. This work was also supported by Hi Seoul Science (Humanities) Fellowship from Seoul Scholarship Foundation.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics