Fabrication of a solution-processed thin-film transistor using zinc oxide nanoparticles and zinc acetate

Sul Lee, Sunho Jeong, Dongjo Kim, Bong Kyun Park, Jooho Moon

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41 Citations (Scopus)


We have fabricated a solution-processed ZnO thin-film transistor without vacuum deposition. ZnO nanoparticles were prepared by the polyol method from zinc acetate, polyvinyl pyrrolidone, and diethyleneglycol. The solution-processable semiconductor ink was prepared by dispersing the synthesized ZnO in a solvent. Inverted stagger type thin-film transistors were fabricated by spin casting the ZnO ink on the heavily doped Si wafer with 200 nm thick SiO2, followed by evaporation of Cr/Au source and drain electrodes. After the drying and heat treatment at 600 {ring operator}C, a relatively dense ZnO film was obtained. The film characteristics were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In order to obtain the electrical properties of the solution-derived transistor, the on-off ratio, threshold voltage, and mobility were measured.

Original languageEnglish
Pages (from-to)361-368
Number of pages8
JournalSuperlattices and Microstructures
Issue number1-6
Publication statusPublished - 2007 Jul

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program funded by the Ministry of Science and Technology (No. R0A-2005-000-10011-0).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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