Abstract
ZnO thin films were grown on GaAs(0 0 1) substrate to study the feasibility of making As-doped textured ZnO films for possible optical device application using radio frequency (rf) magnetron sputtering. It was demonstrated that highly c-axis oriented ZnO crystal with uniformly doped As could be grown using this deposition technique. Crystallinity was shown to improve with higher processing temperature. Photoluminescence spectroscopy, supplemented by cathodo-luminescence imaging, showed that the ZnO films have good optical quality with strong near band emission peak at 3.3 eV and spatially homogeneous luminescence indicating possibility of producing As-doped ZnO films with good crystallinity and optical properties using the technique used herein.
| Original language | English |
|---|---|
| Pages (from-to) | 32-37 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 221 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2004 Jan 15 |
Bibliographical note
Funding Information:This work was supported by Bluetron Co. Ltd. One of the authors, W.K. Choi is grateful to Korea Institute of Science and Technology, for the financial support under the Future Basic/Creativity Development Program.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films