Fabrication and characterization of ZnO single nanowire-based hydrogen sensor

Sachindra Nath Das, Jyoti Prakash Kar, Ji Hyuk Choi, Tae Lee, Kyeong Ju Moon, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)


Vertically aligned ZnO nanowires were grown on c-plane sapphire substrate by metal organic chemical vapor deposition technique. The nanowires were single crystalline and structurally uniform and did not exhibit any noticeable defects. Pt/ZnO single nanowire Schottky diodes were fabricated by using e-beam lithography and then characterized by measuring temperature-dependent I-V characteristics. The diode exhibited a low Schottky barrier height of 0.42 V and ideality factor of 1.6 at room temperature. Temperature-dependent hydrogensensing measurements were carried out with different hydrogen concentrations. A good sensing characteristic (S ≈ 90%) has been observed at room temperature with a response time of ∼55 s.

Original languageEnglish
Pages (from-to)1689-1693
Number of pages5
JournalJournal of Physical Chemistry C
Issue number3
Publication statusPublished - 2010 Jan 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


Dive into the research topics of 'Fabrication and characterization of ZnO single nanowire-based hydrogen sensor'. Together they form a unique fingerprint.

Cite this