Abstract
The chemical vapor infiltration (CVI) process is an effective method for fabricating SiC fiber-reinforced SiC matrix composites but it is slow with an inherent drawback of substantial residual porosity. To obtain the dense SiCf/SiC composite by the CVI process, in situ whisker growing and matrix filling (called whiskering process) was applied. The process was designed to reduce the canning effect during the CVI process and may serve to divide the large natural pores between fibers or bundles by the grown whisker and then fill the matrix inside the modified pore structure. This process was performed using MTS (CH3SiCl3) as a source gas and H2 or N2 as a diluent and the amounts of the whiskers into the matrix phases were changed by controlling the whiskering cycles. The infiltration effects, that is, increasing of the density of the SiCf/SiC composite were investigated. And the improved SiCf/SiC composites were fabricated using this process.
Original language | English |
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Pages (from-to) | 1227-1231 |
Number of pages | 5 |
Journal | Journal of Nuclear Materials |
Volume | 307-311 |
Issue number | 2 SUPPL. |
DOIs | |
Publication status | Published - 2002 Dec |
Bibliographical note
Funding Information:This work was financially supported by Ministry of Science and Technology (MOST) through the Nuclear R&D program.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Materials Science(all)
- Nuclear Energy and Engineering