TY - GEN
T1 - Fabrication and characterization of Pt-oxide electrode for FeRAM application
AU - Kim, Woo Sik
AU - Ha, Soon Mok
AU - Park, Hyung Ho
AU - Lee, Ho Nyung
PY - 2000
Y1 - 2000
N2 - There has been a lot of works on ferroelectric thin films, since it becomes possible to apply them to memory materials in standard silicon integrated circuits. Pt/PZT/Pt system is a widely studied structure of capacitor for the application to FRAM, because of its remarkable electric properties and stability in device operating range. However, several problems are waiting for the answers, such as damage during etching, ferroelectric-electrode interaction, stability during silicon processing, and serious fatigue behavior. Especially, it has been well known that postmetal annealing (PMA) of Pt/PZT system in a hydrogen-containing ambient (e.g, forming gas) causes severe degradation of PZT thin film. In this study, to avoid the degradation caused by PMA, we fabricated the capacitor of Pt-oxide/PZT/Pt structure, and reported the resistance of Pt-oxide upper electrode against hydrogen-induced degradation.
AB - There has been a lot of works on ferroelectric thin films, since it becomes possible to apply them to memory materials in standard silicon integrated circuits. Pt/PZT/Pt system is a widely studied structure of capacitor for the application to FRAM, because of its remarkable electric properties and stability in device operating range. However, several problems are waiting for the answers, such as damage during etching, ferroelectric-electrode interaction, stability during silicon processing, and serious fatigue behavior. Especially, it has been well known that postmetal annealing (PMA) of Pt/PZT system in a hydrogen-containing ambient (e.g, forming gas) causes severe degradation of PZT thin film. In this study, to avoid the degradation caused by PMA, we fabricated the capacitor of Pt-oxide/PZT/Pt structure, and reported the resistance of Pt-oxide upper electrode against hydrogen-induced degradation.
UR - http://www.scopus.com/inward/record.url?scp=84951917115&partnerID=8YFLogxK
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U2 - 10.1109/IMNC.2000.872696
DO - 10.1109/IMNC.2000.872696
M3 - Conference contribution
AN - SCOPUS:84951917115
T3 - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
SP - 186
EP - 187
BT - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2000
Y2 - 11 July 2000 through 13 July 2000
ER -