Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.
|Number of pages||4|
|Publication status||Published - 2010 Dec|
Bibliographical noteFunding Information:
The authors would like to acknowledge funding support by the Sherman family (to W.E.V.), Eurostars (E!11378; to W.E.V.), Erasmus MC fellowship (to W.E.V.), Deutsche Forschungsgemeinschaft (SPP1629; to H.H.), and Federal Ministry of Education and Research (E-RARE "Thyronerve," to H.H.).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry