Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Ji Hyuk Choi, Sachindra Nath Das, Kyeong Ju Moon, Jyoti Prakash Kar, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

Original languageEnglish
Pages (from-to)1582-1585
Number of pages4
JournalSolid-State Electronics
Issue number12
Publication statusPublished - 2010 Dec

Bibliographical note

Funding Information:
The authors would like to acknowledge funding support by the Sherman family (to W.E.V.), Eurostars (E!11378; to W.E.V.), Erasmus MC fellowship (to W.E.V.), Deutsche Forschungsgemeinschaft (SPP1629; to H.H.), and Federal Ministry of Education and Research (E-RARE "Thyronerve," to H.H.).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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