Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Jang Sik Lee; Min Sun Kim; Dongjo Kim; Yong Mu Kim; Jooho Moon; Seung Ki Joo

doi:10.1063/1.3105983

Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Jang Sik Lee, Min Sun Kim, Dongjo Kim, Yong Mu Kim, Jooho Moon, Seung Ki Joo

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.

Original language	English
Article number	122105
Journal	Applied Physics Letters
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.3105983
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the CMPS (Grant No. R11–2005–048–00000-0) under the auspices of the ERC program of MEST/KOSEF, by “SystemIC2010” project of MKE, by the KOSEF grant funded by the Korea Government (MEST) (Grant No. R01–2008–000–11994-0), and by the KRF grant funded by the Korea Government (MEST) (Grant No. KRF-2008-313–D00597). In addition, J.M. acknowledges the support by the NRL Program of the KOSEF/MEST (Grant No. R0A-2005-000–10011-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization",

abstract = "High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.",

author = "Lee, {Jang Sik} and Kim, {Min Sun} and Dongjo Kim and Kim, {Yong Mu} and Jooho Moon and Joo, {Seung Ki}",

note = "Funding Information: This work was supported by the CMPS (Grant No. R11–2005–048–00000-0) under the auspices of the ERC program of MEST/KOSEF, by “SystemIC2010” project of MKE, by the KOSEF grant funded by the Korea Government (MEST) (Grant No. R01–2008–000–11994-0), and by the KRF grant funded by the Korea Government (MEST) (Grant No. KRF-2008-313–D00597). In addition, J.M. acknowledges the support by the NRL Program of the KOSEF/MEST (Grant No. R0A-2005-000–10011-0). ",

year = "2009",

doi = "10.1063/1.3105983",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

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AU - Lee, Jang Sik

AU - Kim, Min Sun

AU - Kim, Dongjo

AU - Kim, Yong Mu

AU - Moon, Jooho

AU - Joo, Seung Ki

N1 - Funding Information: This work was supported by the CMPS (Grant No. R11–2005–048–00000-0) under the auspices of the ERC program of MEST/KOSEF, by “SystemIC2010” project of MKE, by the KOSEF grant funded by the Korea Government (MEST) (Grant No. R01–2008–000–11994-0), and by the KRF grant funded by the Korea Government (MEST) (Grant No. KRF-2008-313–D00597). In addition, J.M. acknowledges the support by the NRL Program of the KOSEF/MEST (Grant No. R0A-2005-000–10011-0).

PY - 2009

Y1 - 2009

N2 - High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.

AB - High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.

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Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

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Bibliographical note

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