Fabrication and characterization of La₂Ti₂O ₇ films for ferroelectric-gate field effect transistor applications

For applying ferroelectric material to nonvolatile active memory element in ferroelectric field effect devices, La 2 Ti 2 O 7 films on CeO 2 /Si (100) were attained at 650C using rapid thermal annealing process followed by each coating step. The crystalline property of the film as annealing temperature was characterized by X-ray diffraction C-V characteristics were measured to investigate the ferroelectric memory. As a result, the memory windows were in the range of 0.4V to 2.1V when the applied voltage varied from 3V to 9V. However, the final annealing temperature increased, the memory window decreases due to the formation of complex oxide layer underneath CeO 2.