Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device

E. K. Kim, H. Y. Lee, J. Park, S. J. Park, J. H. Kwak, S. E. Moon, S. Maeng, K. H. Park, S. W. Kim, H. J. Ji, G. T. Kim

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15 Citations (Scopus)


A single ZnO nanowire device was fabricated by electron-beam lithography, and its current-voltage characteristics were recorded while varying the atmospheric pressure to test possible applications as a chemical gas sensor. Vertically well aligned ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. Semiconducting nanowire devices were fabricated by using photolithography and e-beam lithography, and their electrical properties were studied. To realize reliable device operation, which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact-resistance problem by using a scanning probe microscopic tool to characterize surface-potential behaviors. To overcome the contact-resistance problem, a post thermal process was adapted to the nanowire device. Atmospheric-pressure-dependent electrical properties of the ZnO nanowire device were studied for chemical-sensor application.

Original languageEnglish
Pages (from-to)S170-S173
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 2
Publication statusPublished - 2007 Oct

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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