Abstract
This paper proposes to exploit the capability of retention time relaxation in flash memories for improving the lifetime of an SLCbased SSD. The main idea is that as a majority of I/O data in a typical workload do not need a retention time larger than a few days, we can have multiple partial program states in a cell and use every two states to store one-bit data at each time. Thus, we can store multiple bits in a cell (one bit at each time) without erasing it after each write -That would directly translates into lifetime enhancement. The proposed scheme is called Dense-SLC (D-SLC) flash design which improves SSD lifetime by 5.1×-8.6×.
| Original language | English |
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| Title of host publication | SIGMETRICS 2017 Abstracts - Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems |
| Publisher | Association for Computing Machinery, Inc |
| Pages | 53 |
| Number of pages | 1 |
| ISBN (Electronic) | 9781450350327 |
| DOIs | |
| Publication status | Published - 2017 Jun 5 |
| Event | 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, SIGMETRICS 2017 - Urbana-Champaign, United States Duration: 2017 Jun 5 → 2017 Jun 9 |
Publication series
| Name | SIGMETRICS 2017 Abstracts - Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems |
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Other
| Other | 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, SIGMETRICS 2017 |
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| Country/Territory | United States |
| City | Urbana-Champaign |
| Period | 17/6/5 → 17/6/9 |
Bibliographical note
Publisher Copyright:© 2017 ACM.
All Science Journal Classification (ASJC) codes
- Software
- Hardware and Architecture
- Computer Networks and Communications
- Computational Theory and Mathematics