Abstract
In this paper, an explicit continuous I-V model was proposed for field-effect transistors (FETs) with 2-dimensional (2D) transition metal dichalcogenide (TMD) as the semiconductor. The model was derived by means of charge control method. The explicit continuous I-V model was compared with the implicit I-V model, which had been proved valid for FETs based on 2D TMDs. The explicit I-V model agrees well with exact numeric solution of the implicit I-V model. In addition, the explicit continuous model is proven valid by comparing it with the experimental data reported.
| Original language | English |
|---|---|
| Pages (from-to) | 61-66 |
| Number of pages | 6 |
| Journal | Microelectronics Journal |
| Volume | 88 |
| DOIs | |
| Publication status | Published - 2019 Jun |
Bibliographical note
Funding Information:This work was supported in part by the National Natural Science Foundation of China (Grant No.: 61404048 ), National Natural Science Foundation of China (Grant No.: 51877073 ), Natural Science Foundation of Hunan Province, China (Grant No.: 2015JJ3043 ).
Funding Information:
This work was supported in part by the National Natural Science Foundation of China (Grant No.: 61404048), National Natural Science Foundation of China (Grant No.: 51877073), Natural Science Foundation of Hunan Province, China (Grant No.: 2015JJ3043).L. F. Deng thanks to China Scholar Council to support his research cooperation with Department of Physics, Yonsei University, Seoul, South Korea. This work was supported in part by the National Natural Science Foundation of China (Grant No.: 61404048), National Natural Science Foundation of China (Grant No.: 51877073), Natural Science Foundation of Hunan Province, China (Grant No.: 2015JJ3043).
Publisher Copyright:
© 2019 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering