Excimer-laser annealing for low-temperature poly-si tfts

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For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final micro structure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalJournal of Information Display
Issue number4
Publication statusPublished - 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering


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