@inproceedings{f0d17ba5a6f9483bb64a211071e9ea09,
title = "Excimer laser annealed low temperature solution-processed oxide thin film transistors",
abstract = "We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300°C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also gradually improved from 0.04 cm 2/Vsec to 0.58 cm 2/Vsec because of the reduction of halide residues as trap states by employing ELA treatment. We have observed that the electrical characteristics of 300°C low temperature solution-processed ZTO TFTs could be improved by employing ELA treatment so that it is suitable for flexible display backplane such as glass or plastic substrate.",
author = "Lee, {Jeong Soo} and Song, {Seung Min} and Cho, {Seung Hwan} and Song, {Moon Kyu} and Kim, {Yong Hoon} and Kwon, {Jang Yeon} and Han, {Min Koo}",
year = "2012",
language = "English",
isbn = "9781467303996",
series = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",
pages = "135--138",
booktitle = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",
note = "19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 ; Conference date: 04-07-2012 Through 06-07-2012",
}