Exchange-induced electron transport in heavily phosphorus-doped Si nanowires

Tae Eon Park, Byoung Chul Min, Ilsoo Kim, Jee Eun Yang, Moon Ho Jo, Joonyeon Chang, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Heavily phosphorus-doped silicon nanowires (Si NWs) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (T min), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.

Original languageEnglish
Pages (from-to)4730-4735
Number of pages6
JournalNano letters
Issue number11
Publication statusPublished - 2011 Nov 9

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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