Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

Dongguen Shin; Jeihyun Lee; Hyunbok Lee; Hyein Kim; Yeonjin Yi

doi:10.1016/j.cap.2014.03.006

Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

Dongguen Shin, Jeihyun Lee, Hyunbok Lee, Hyein Kim, Yeonjin Yi

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density-voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson-Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler-Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.

Original language	English
Pages (from-to)	778-783
Number of pages	6
Journal	Current Applied Physics
Volume	14
Issue number	5
DOIs	https://doi.org/10.1016/j.cap.2014.03.006
Publication status	Published - 2014 May

Bibliographical note

Funding Information:
This work was supported by a research project of the National Research Foundation of Korea ( 2013R1A1A1004778 and 2012M3A7B4049801 ) and Samsung Display Company .

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2014.03.006

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title = "Evidence for the changes in hole injection mechanism with a CoPc hole injection layer",

abstract = "The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density-voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson-Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler-Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.",

author = "Dongguen Shin and Jeihyun Lee and Hyunbok Lee and Hyein Kim and Yeonjin Yi",

note = "Funding Information: This work was supported by a research project of the National Research Foundation of Korea ( 2013R1A1A1004778 and 2012M3A7B4049801 ) and Samsung Display Company . ",

year = "2014",

month = may,

doi = "10.1016/j.cap.2014.03.006",

language = "English",

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T1 - Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

AU - Shin, Dongguen

AU - Lee, Jeihyun

AU - Lee, Hyunbok

AU - Kim, Hyein

AU - Yi, Yeonjin

N1 - Funding Information: This work was supported by a research project of the National Research Foundation of Korea ( 2013R1A1A1004778 and 2012M3A7B4049801 ) and Samsung Display Company .

PY - 2014/5

Y1 - 2014/5

N2 - The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density-voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson-Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler-Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.

AB - The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density-voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson-Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler-Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.

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JO - Current Applied Physics

JF - Current Applied Physics

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Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

Abstract

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