Evaluation of sio2 aerogel thin film with ultra low dielectric constant as an intermetal dielectric

Moon Ho Jo, Jung Kyun Hong, Hyung Ho Park, Joong Jung Kim, Sang Hun Hyun

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


The material and dielectric properties of SiO2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.15 using metal/insulator/semiconductor structure. Dielectric constant of SiO2 aerogel was sensitive to the surface coverage and we could obtain a lower dielectric constant, 2.07 with thermal dehydration at 450°C. This value was one of the lowest among intermetal dielectric materials ever reported.

Original languageEnglish
Pages (from-to)343-348
Number of pages6
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - 1997 Jan

Bibliographical note

Funding Information:
This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 96004.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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