Evaluation of sio2 aerogel thin film with ultra low dielectric constant as an intermetal dielectric

Moon Ho Jo; Jung Kyun Hong; Hyung Ho Park; Joong Jung Kim; Sang Hun Hyun

doi:10.1016/s0167-9317(96)00063-9

Evaluation of sio₂ aerogel thin film with ultra low dielectric constant as an intermetal dielectric

Moon Ho Jo, Jung Kyun Hong, Hyung Ho Park, Joong Jung Kim, Sang Hun Hyun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The material and dielectric properties of SiO₂ aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.15 using metal/insulator/semiconductor structure. Dielectric constant of SiO₂ aerogel was sensitive to the surface coverage and we could obtain a lower dielectric constant, 2.07 with thermal dehydration at 450°C. This value was one of the lowest among intermetal dielectric materials ever reported.

Original language	English
Pages (from-to)	343-348
Number of pages	6
Journal	Microelectronic Engineering
Volume	33
Issue number	1-4
DOIs	https://doi.org/10.1016/s0167-9317(96)00063-9
Publication status	Published - 1997 Jan

Bibliographical note

Funding Information:
This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 96004.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/s0167-9317(96)00063-9

Cite this

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title = "Evaluation of sio2 aerogel thin film with ultra low dielectric constant as an intermetal dielectric",

abstract = "The material and dielectric properties of SiO2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.15 using metal/insulator/semiconductor structure. Dielectric constant of SiO2 aerogel was sensitive to the surface coverage and we could obtain a lower dielectric constant, 2.07 with thermal dehydration at 450°C. This value was one of the lowest among intermetal dielectric materials ever reported.",

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AU - Jo, Moon Ho

AU - Hong, Jung Kyun

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AU - Kim, Joong Jung

AU - Hyun, Sang Hun

N1 - Funding Information: This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 96004.

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AB - The material and dielectric properties of SiO2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.15 using metal/insulator/semiconductor structure. Dielectric constant of SiO2 aerogel was sensitive to the surface coverage and we could obtain a lower dielectric constant, 2.07 with thermal dehydration at 450°C. This value was one of the lowest among intermetal dielectric materials ever reported.

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