Erratum: Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))

Sang Joon Park, Sunggi Baik, Hyugjun Kim

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish
Pages (from-to)354-355
Number of pages2
JournalMaterials Letters
Publication statusPublished - 2012 Dec 15

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this