Erratum: Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172))

Sang Joon Park; Inchan Hwang; Heungsun Lee; Sunggi Baik; Hyungjun Kim

doi:10.1016/j.jallcom.2012.09.129

Erratum: Facile fabrication of ordered Si _1-xGe _x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172))

Sang Joon Park, Inchan Hwang, Heungsun Lee, Sunggi Baik, Hyungjun Kim

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	152
Number of pages	1
Journal	Journal of Alloys and Compounds
Volume	547
DOIs	https://doi.org/10.1016/j.jallcom.2012.09.129
Publication status	Published - 2013 Jan 15

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2012.09.129

Cite this

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title = "Erratum: Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172))",

author = "Park, {Sang Joon} and Inchan Hwang and Heungsun Lee and Sunggi Baik and Hyungjun Kim",

year = "2013",

month = jan,

day = "15",

doi = "10.1016/j.jallcom.2012.09.129",

language = "English",

volume = "547",

pages = "152",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

Erratum: Facile fabrication of ordered Si _1-xGe _x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172)). / Park, Sang Joon; Hwang, Inchan; Lee, Heungsun et al.
In: Journal of Alloys and Compounds, Vol. 547, 15.01.2013, p. 152.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172))

AU - Park, Sang Joon

AU - Hwang, Inchan

AU - Lee, Heungsun

AU - Baik, Sunggi

AU - Kim, Hyungjun

PY - 2013/1/15

Y1 - 2013/1/15

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DO - 10.1016/j.jallcom.2012.09.129

M3 - Comment/debate

AN - SCOPUS:84869505090

SN - 0925-8388

VL - 547

SP - 152

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Erratum: Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172))

All Science Journal Classification (ASJC) codes

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Cite this

Erratum: Facile fabrication of ordered Si _1-xGe _x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates (Journal of Alloys and Compounds (2012) 535 (166-172))