Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

Sung Hyun Lee; Wan Shick Hong; Jong Man Kim; Hyuck Lim; Kuyng Bae Park; Chul Lae Cho; Kyung Eun Lee; Do Young Kim; Ji Sim Jung; Jang Yeon Kwon; Takashi Noguchi

doi:10.1143/JJAP.45.L485

Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

Sung Hyun Lee, Wan Shick Hong, Jong Man Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	L485
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	17-19
DOIs	https://doi.org/10.1143/JJAP.45.L485
Publication status	Published - 2006 Apr 28

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.L485

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Lee, S. H., Hong, W. S., Kim, J. M., Lim, H., Park, K. B., Cho, C. L., Lee, K. E., Kim, D. Y., Jung, J. S., Kwon, J. Y., & Noguchi, T. (2006). Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). Japanese Journal of Applied Physics, 45(17-19), L485. https://doi.org/10.1143/JJAP.45.L485

Lee, Sung Hyun ; Hong, Wan Shick ; Kim, Jong Man et al. / Erratum : Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). In: Japanese Journal of Applied Physics. 2006 ; Vol. 45, No. 17-19. pp. L485.

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title = "Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))",

author = "Lee, {Sung Hyun} and Hong, {Wan Shick} and Kim, {Jong Man} and Hyuck Lim and Park, {Kuyng Bae} and Cho, {Chul Lae} and Lee, {Kyung Eun} and Kim, {Do Young} and Jung, {Ji Sim} and Kwon, {Jang Yeon} and Takashi Noguchi",

year = "2006",

month = apr,

day = "28",

doi = "10.1143/JJAP.45.L485",

language = "English",

volume = "45",

pages = "L485",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "17-19",

}

Lee, SH, Hong, WS, Kim, JM, Lim, H, Park, KB, Cho, CL, Lee, KE, Kim, DY, Jung, JS, Kwon, JY & Noguchi, T 2006, 'Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))', Japanese Journal of Applied Physics, vol. 45, no. 17-19, pp. L485. https://doi.org/10.1143/JJAP.45.L485

Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). / Lee, Sung Hyun; Hong, Wan Shick; Kim, Jong Man et al.
In: Japanese Journal of Applied Physics, Vol. 45, No. 17-19, 28.04.2006, p. L485.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

AU - Lee, Sung Hyun

AU - Hong, Wan Shick

AU - Kim, Jong Man

AU - Lim, Hyuck

AU - Park, Kuyng Bae

AU - Cho, Chul Lae

AU - Lee, Kyung Eun

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

PY - 2006/4/28

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U2 - 10.1143/JJAP.45.L485

DO - 10.1143/JJAP.45.L485

M3 - Comment/debate

AN - SCOPUS:33745299162

SN - 0021-4922

VL - 45

SP - L485

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 17-19

ER -

Lee SH, Hong WS, Kim JM, Lim H, Park KB, Cho CL et al. Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). Japanese Journal of Applied Physics. 2006 Apr 28;45(17-19):L485. doi: 10.1143/JJAP.45.L485

Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

All Science Journal Classification (ASJC) codes

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