Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process

Myung Jae Lee; Hyo Soon Kang; Woo Young Choi

doi:10.1109/LED.2008.2000717

Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process

Myung Jae Lee, Hyo Soon Kang, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.

Original language	English
Pages (from-to)	1115-1117
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/LED.2008.2000717
Publication status	Published - 2008

Bibliographical note

Funding Information:
Manuscript received April 12, 2008. Current version published September 24, 2008. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA). The review of this letter was arranged by Prof. P. K.-L. Yu.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2000717

Cite this

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abstract = "We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.",

author = "Lee, {Myung Jae} and Kang, {Hyo Soon} and Choi, {Woo Young}",

note = "Funding Information: Manuscript received April 12, 2008. Current version published September 24, 2008. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA). The review of this letter was arranged by Prof. P. K.-L. Yu.",

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AU - Kang, Hyo Soon

AU - Choi, Woo Young

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PY - 2008

Y1 - 2008

N2 - We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.

AB - We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.

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Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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