Epitaxy of Si1%xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

Sangmo Koo; Hyunchul Jang; Dae Hong Ko

doi:10.7567/JJAP.56.095502

Epitaxy of Si_1%xC_x via ultrahigh-vacuum chemical vapor deposition using Si₂H₆, Si₃H₈, or Si₄H₁₀ as Si precursors

Sangmo Koo, Hyunchul Jang, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, disilane (Si₂H₆), trisilane (Si₃H₈), and tetrasilane (Si₄H₁₀) were used as Si precursors for the growth of Si₁%_xC_x epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si₁%_xC_x epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si₁%_xC_x epilayers owing to the additional injection of a C-source gas (SiH₃CH₃) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

Original language	English
Article number	095502
Journal	Japanese journal of applied physics
Volume	56
Issue number	9
DOIs	https://doi.org/10.7567/JJAP.56.095502
Publication status	Published - 2017

Bibliographical note

Funding Information:
This research was financially supported by a grant from the R&D Programs for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant No. 10048929) and the Joint Program for Samsung Electronics Co., Ltd. (SEC)–Yonsei University.

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.56.095502

Cite this

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title = "Epitaxy of Si1%xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors",

abstract = "In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.",

author = "Sangmo Koo and Hyunchul Jang and Ko, {Dae Hong}",

note = "Funding Information: This research was financially supported by a grant from the R&D Programs for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant No. 10048929) and the Joint Program for Samsung Electronics Co., Ltd. (SEC)–Yonsei University. Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

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AU - Koo, Sangmo

AU - Jang, Hyunchul

AU - Ko, Dae Hong

N1 - Funding Information: This research was financially supported by a grant from the R&D Programs for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant No. 10048929) and the Joint Program for Samsung Electronics Co., Ltd. (SEC)–Yonsei University. Publisher Copyright: © 2017 The Japan Society of Applied Physics.

PY - 2017

Y1 - 2017

N2 - In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

AB - In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

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