Abstract
In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.
Original language | English |
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Article number | 095502 |
Journal | Japanese journal of applied physics |
Volume | 56 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2017 |
Bibliographical note
Publisher Copyright:© 2017 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy