Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers

R. T. Haasch; T. Y. Lee; D. Gall; J. E. Greene; I. Petrov

doi:10.1116/1.1367599

Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar⁺ Sputter Etched Layers

R. T. Haasch, T. Y. Lee, D. Gall, J. E. Greene, I. Petrov

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial VN(001) layers grown in situ which were Ar⁺ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N₂ discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/V ratio of 1.06 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar⁺ at an angle of 40° to a constant nitrogen-to-vanadium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/V ratio of 0.46, indicating a preferential removal of nitrogen.

Original language	English
Pages (from-to)	233-241
Number of pages	9
Journal	Surface Science Spectra
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.1367599
Publication status	Published - 2000 Jul 1

Bibliographical note

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1367599

Cite this

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abstract = "X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial VN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/V ratio of 1.06 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-vanadium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/V ratio of 0.46, indicating a preferential removal of nitrogen.",

author = "Haasch, {R. T.} and Lee, {T. Y.} and D. Gall and Greene, {J. E.} and I. Petrov",

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AU - Haasch, R. T.

AU - Lee, T. Y.

AU - Gall, D.

AU - Greene, J. E.

AU - Petrov, I.

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N2 - X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial VN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/V ratio of 1.06 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-vanadium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/V ratio of 0.46, indicating a preferential removal of nitrogen.

AB - X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial VN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/V ratio of 1.06 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-vanadium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/V ratio of 0.46, indicating a preferential removal of nitrogen.

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