Epitaxial VN(001) Grown and Analyzed in situ by AES after (1) Deposition and (2) Ar+ Sputter Etching

N. Finnegan; T. Y. Lee; R. T. Haasch; J. E. Greene; I. Petrov

doi:10.1116/1.1367616

Epitaxial VN(001) Grown and Analyzed in situ by AES after (1) Deposition and (2) Ar⁺ Sputter Etching

N. Finnegan, T. Y. Lee, R. T. Haasch, J. E. Greene, I. Petrov

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In situ Auger electron spectroscopy (AES) spectra were obtained on single-crystal VN(001) layers grown on MgO(001)1 × 1 in a multichamber ultrahigh vacuum (UHV) system. A turbomolecular-pumped magnetron sputter deposition chamber was attached to a Physical Electronics model 660 scanning Auger system to allow spectra to be collected on the as-deposited film without exposure to air. The spectra show that the film surfaces are free of O and C. Spectra are also presented following sputter etching with a 3 keV Ar⁺ beam at an incident current density of 0.3 mA cm⁻². The film was sputtered until the N/V peak height ratio reached equilibrium, then spectra were acquired for the after sputter condition. AES spectra were collected for both the as-deposited and Ar⁺ sputter etched films using primary beam energies of 3, 5, 10, and 20 keV. The as-deposited bulk film composition was analyzed by Rutherford backscattering spectroscopy (RBS) and found to be stoichiometric with a N/V ratio of 1.04 ± 0.02.

Original language	English
Pages (from-to)	242-249
Number of pages	8
Journal	Surface Science Spectra
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.1367616
Publication status	Published - 2000 Jul 1

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1367616

Cite this

@article{8267eff8a9474b9ca5b5897deed75230,

title = "Epitaxial VN(001) Grown and Analyzed in situ by AES after (1) Deposition and (2) Ar+ Sputter Etching",

abstract = "In situ Auger electron spectroscopy (AES) spectra were obtained on single-crystal VN(001) layers grown on MgO(001)1 × 1 in a multichamber ultrahigh vacuum (UHV) system. A turbomolecular-pumped magnetron sputter deposition chamber was attached to a Physical Electronics model 660 scanning Auger system to allow spectra to be collected on the as-deposited film without exposure to air. The spectra show that the film surfaces are free of O and C. Spectra are also presented following sputter etching with a 3 keV Ar+ beam at an incident current density of 0.3 mA cm−2. The film was sputtered until the N/V peak height ratio reached equilibrium, then spectra were acquired for the after sputter condition. AES spectra were collected for both the as-deposited and Ar+ sputter etched films using primary beam energies of 3, 5, 10, and 20 keV. The as-deposited bulk film composition was analyzed by Rutherford backscattering spectroscopy (RBS) and found to be stoichiometric with a N/V ratio of 1.04 ± 0.02.",

author = "N. Finnegan and Lee, {T. Y.} and Haasch, {R. T.} and Greene, {J. E.} and I. Petrov",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois. Publisher Copyright: {\textcopyright} 2000 American Vacuum Society.",

year = "2000",

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doi = "10.1116/1.1367616",

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AU - Finnegan, N.

AU - Lee, T. Y.

AU - Haasch, R. T.

AU - Greene, J. E.

AU - Petrov, I.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois. Publisher Copyright: © 2000 American Vacuum Society.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - In situ Auger electron spectroscopy (AES) spectra were obtained on single-crystal VN(001) layers grown on MgO(001)1 × 1 in a multichamber ultrahigh vacuum (UHV) system. A turbomolecular-pumped magnetron sputter deposition chamber was attached to a Physical Electronics model 660 scanning Auger system to allow spectra to be collected on the as-deposited film without exposure to air. The spectra show that the film surfaces are free of O and C. Spectra are also presented following sputter etching with a 3 keV Ar+ beam at an incident current density of 0.3 mA cm−2. The film was sputtered until the N/V peak height ratio reached equilibrium, then spectra were acquired for the after sputter condition. AES spectra were collected for both the as-deposited and Ar+ sputter etched films using primary beam energies of 3, 5, 10, and 20 keV. The as-deposited bulk film composition was analyzed by Rutherford backscattering spectroscopy (RBS) and found to be stoichiometric with a N/V ratio of 1.04 ± 0.02.

AB - In situ Auger electron spectroscopy (AES) spectra were obtained on single-crystal VN(001) layers grown on MgO(001)1 × 1 in a multichamber ultrahigh vacuum (UHV) system. A turbomolecular-pumped magnetron sputter deposition chamber was attached to a Physical Electronics model 660 scanning Auger system to allow spectra to be collected on the as-deposited film without exposure to air. The spectra show that the film surfaces are free of O and C. Spectra are also presented following sputter etching with a 3 keV Ar+ beam at an incident current density of 0.3 mA cm−2. The film was sputtered until the N/V peak height ratio reached equilibrium, then spectra were acquired for the after sputter condition. AES spectra were collected for both the as-deposited and Ar+ sputter etched films using primary beam energies of 3, 5, 10, and 20 keV. The as-deposited bulk film composition was analyzed by Rutherford backscattering spectroscopy (RBS) and found to be stoichiometric with a N/V ratio of 1.04 ± 0.02.

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