Epitaxial VN(001) Grown and Analyzed in situ by AES after (1) Deposition and (2) Ar+ Sputter Etching

N. Finnegan, T. Y. Lee, R. T. Haasch, J. E. Greene, I. Petrov

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1 Citation (Scopus)


In situ Auger electron spectroscopy (AES) spectra were obtained on single-crystal VN(001) layers grown on MgO(001)1 × 1 in a multichamber ultrahigh vacuum (UHV) system. A turbomolecular-pumped magnetron sputter deposition chamber was attached to a Physical Electronics model 660 scanning Auger system to allow spectra to be collected on the as-deposited film without exposure to air. The spectra show that the film surfaces are free of O and C. Spectra are also presented following sputter etching with a 3 keV Ar+ beam at an incident current density of 0.3 mA cm−2. The film was sputtered until the N/V peak height ratio reached equilibrium, then spectra were acquired for the after sputter condition. AES spectra were collected for both the as-deposited and Ar+ sputter etched films using primary beam energies of 3, 5, 10, and 20 keV. The as-deposited bulk film composition was analyzed by Rutherford backscattering spectroscopy (RBS) and found to be stoichiometric with a N/V ratio of 1.04 ± 0.02.

Original languageEnglish
Pages (from-to)242-249
Number of pages8
JournalSurface Science Spectra
Issue number3
Publication statusPublished - 2000 Jul 1

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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