Epitaxial ScN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers

R. T. Haasch, T. Y. Lee, D. Gall, J. E. Greene, I. Petrov

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8 Citations (Scopus)

Abstract

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial ScN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited by ultrahigh vacuum reactive magnetron sputter deposition on MgO(001) at 800 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/Sc ratio of 1.11 ± 0.03 by Rutherford backscattering spectroscopy (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° until a constant nitrogen-to-scandium ratio was established. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by HeI and He II UV radiation. The sputter etched films have a N/Sc ratio of 0.99 indicating a preferential removal of nitrogen.

Original languageEnglish
Pages (from-to)178-184
Number of pages7
JournalSurface Science Spectra
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 Jul 1

Bibliographical note

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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