Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

Sang Woo Kim, Hyun Kyu Park, Min Su Yi, Nae Man Park, Jong Hyurk Park, Sang Hyeob Kim, Sung Lyul Maeng, Chel Jong Choi, Seung Eon Moon

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94 Citations (Scopus)


Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

Original languageEnglish
Article number033107
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2007

Bibliographical note

Funding Information:
The authors thank D.-H. Lee and J.-M. Lee for their help in the growth of ZnO nanowall samples. This work was supported by the Ministry of Information and Communication (MIC), Republic of Korea, under Project No. A1100-0602-0101. Synchrotron x-ray scattering experiments at PLS were supported in part by the Ministry of Science and Technology (MOST) and POSTECH, Republic of Korea.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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