Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

Sang Woo Kim, Hyun Kyu Park, Min Su Yi, Nae Man Park, Jong Hyurk Park, Sang Hyeob Kim, Sung Lyul Maeng, Chel Jong Choi, Seung Eon Moon

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)

Abstract

Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

Original languageEnglish
Article number033107
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
The authors thank D.-H. Lee and J.-M. Lee for their help in the growth of ZnO nanowall samples. This work was supported by the Ministry of Information and Communication (MIC), Republic of Korea, under Project No. A1100-0602-0101. Synchrotron x-ray scattering experiments at PLS were supported in part by the Ministry of Science and Technology (MOST) and POSTECH, Republic of Korea.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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