Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer

S. C. Choi; M. H. Cho; S. W. Whangbo; C. N. Whang; S. B. Kang; S. I. Lee; M. Y. Lee

doi:10.1063/1.119683

Epitaxial growth of Y₂O₃ films on Si(100) without an interfacial oxide layer

S. C. Choi, M. H. Cho, S. W. Whangbo, C. N. Whang, S. B. Kang, S. I. Lee, M. Y. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Heteroepitaxial Y₂O₃ films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y₂O₃ film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y₂O₃ and Si(100) is Y₂O₃(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer.

Original language	English
Pages (from-to)	903-905
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	7
DOIs	https://doi.org/10.1063/1.119683
Publication status	Published - 1997 Aug 18

Bibliographical note

Funding Information:
Zymo Research Corporation, Irvine, CA provided their kits as well as its 16S sequencing service for use in this study. S.K.F. were supported by the German Research Foundation (DFG, Renoprotection CRC1365).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.119683

Cite this

@article{6002d8a6ea5d4d25b3fb1a0c09433fe9,

title = "Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer",

abstract = "Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer.",

author = "Choi, {S. C.} and Cho, {M. H.} and Whangbo, {S. W.} and Whang, {C. N.} and Kang, {S. B.} and Lee, {S. I.} and Lee, {M. Y.}",

note = "Funding Information: Zymo Research Corporation, Irvine, CA provided their kits as well as its 16S sequencing service for use in this study. S.K.F. were supported by the German Research Foundation (DFG, Renoprotection CRC1365).",

year = "1997",

month = aug,

day = "18",

doi = "10.1063/1.119683",

language = "English",

volume = "71",

pages = "903--905",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer

AU - Choi, S. C.

AU - Cho, M. H.

AU - Whangbo, S. W.

AU - Whang, C. N.

AU - Kang, S. B.

AU - Lee, S. I.

AU - Lee, M. Y.

N1 - Funding Information: Zymo Research Corporation, Irvine, CA provided their kits as well as its 16S sequencing service for use in this study. S.K.F. were supported by the German Research Foundation (DFG, Renoprotection CRC1365).

PY - 1997/8/18

Y1 - 1997/8/18

N2 - Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer.

AB - Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer.

UR - http://www.scopus.com/inward/record.url?scp=0000125857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000125857&partnerID=8YFLogxK

U2 - 10.1063/1.119683

DO - 10.1063/1.119683

M3 - Article

AN - SCOPUS:0000125857

SN - 0003-6951

VL - 71

SP - 903

EP - 905

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -